SiC Schottky Barrier Diodes

SiC Schottky barrier diodes (SBDs) feature high reverse voltage ratings. In addition to SBDs with short reverse recovery time (trr), Toshiba provides 650-V SBDs with a junction barrier Schottky (JBS) structure that provide low leakage current (Ir) and high surge current capability required for switched-mode power supplies. These devices help improve the efficiency of switched-mode power supplies.

A&S Thyristor Co.,Ltd is a global supplier of TOSHIBA SiC Schottky Barrier Diodes, TOSHIBA Thyristor, TOSHIBA Diodes, TOSHIBA SCR, TOSHIBA IGBT, A&S Thyristor and many more. Focusing on providing high-quality semiconductor and thyristor.

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