SiC devices have excellent characteristics that realize high blocking voltage, low power dissipation, high-frequency operation and high-temperature operation. Power semiconductors that make use of SiC achieve significant reduction in energy consumption and can be used to develop smaller and lighter products.

The improved characteristic of SiC devices relating to the high temperature operation and the high breakdown voltage capability compared to Si devices make them to a very effective technology to achieve a high efficiency and allow downsizing of equipment. Fuji Electric has commercialized SiC hybrid modules with breakdown voltages of 600 V ～ 3300 V as power devices for inverters that contributes to energy saving.

A&S Thyristor Co.,Ltd is a global supplier of Fuji SiC Devices, Fuji Thyristor, FUJI IGBT, FUJI SCR, A&S Thyristor and many more. Focusing on providing high-quality semiconductor and thyristor.