FRAM (Ferroelectric Random-Access Memory) is a unique memory solution that combines the best features of RAM and ROM. It significantly outperforms existing non-volatile memories like E2PROM and Flash by offering fast random writing access, high write cycle endurance and low power consumption. FRAM technology functions by utilizing ferroelectric material in the memory cells. Its outstanding features enable significant performance improvements, frequent data access and last data backup at sudden power outage for customer applicationsA&S Thyristor Co.,Ltd is a global supplier of FUJITSU Parallel devices, FUJITSU Thyristor, FUJITSU IGBT, FUJITSU SCR, A&S Thyristor and many more. Focusing on providing high-quality semiconductor and thyristor.